According to a new report published by AkVis Intelligence, titled, “GaN Power Device Market by Devices, Voltage Range, vertical, Applications, Global Opportunity Analysis and Industry Forecast, 2024–2032,” the global GaN Power Device Market Size Was Valued at USD 328.63 Million in 2023 and is Projected to Reach USD 5185.84 Million by 2032, Growing at a CAGR of 35.87% From 2024-2032. Power semiconductor devices are essential for controlling power flow in electronic circuits, and switched-mode power supplies (SMPS) are a popular application for these devices. These materials are essential for many electronic devices, enabling fast switching to efficiently convert current to regulate and stabilize voltage and current output. In power devices, gallium nitride (GaN) stands out among semiconductors due to its unique efficiency and performance advantages.
GaN power supplies are known for their ability to significantly reduce power losses in electronic systems. The main reason for this efficiency is the ability of GaN to operate at higher frequencies while generating little heat, resulting in less power dissipation than conventional silicon devices. The fast switching capability of GaN devices allows them to handle rapid current and voltage fluctuations, a critical requirement for today's electronics applications that require fast and accurate power regulation.
According to the GaN Power Device Market is segmented into Devices, Voltage Range, Application, and Region. By Devices, the market is categorized into GaN Power Discrete Devices, GaN Power ICs, and GaN Power Modules. By Voltage Range, the market is categorized into (<200 Volt, 200–600 Volt, >600 Volt. By Vertical, the market is categorized into Medical, Military, Defence and Aerospace, Renewables, Industrial, Consumer Electronics, IT and Telecommunication, Automotive, Aerospace, and Defense. By Applications, the market is categorized into Power Drive, Supply and Inverter, Radio Frequency, and Others. By region, it is analyzed across North America (U.S.; Canada; Mexico), Eastern Europe (Bulgaria; The Czech Republic; Hungary; Poland; Romania; Rest of Eastern Europe), Western Europe (Germany; UK; France; Netherlands; Italy; Russia; Spain; Rest of Western Europe), Asia-Pacific (China; India; Japan; Southeast Asia, etc.), South America (Brazil; Argentina, etc.), Middle East & Africa (Saudi Arabia; South Africa, etc.).
WiTricity Corp. demonstrated distinct advantages of gallium nitride (GaN) field-effect transistors (FETs) over traditional silicon MOSFETs in wireless charging technology. GaN FETs greatly improve switching speed, which increases the efficiency of resonant wireless power transmission. Efficiency improvements are important because they allow better power transmission in various applications. Silicon MOSFETs can only operate at somewhat high frequencies due to the proximity limitations of their switching capabilities. GaN power devices perform better at high frequencies, making them ideal for wireless charging. The excellent switching capability of GaN transistors improves their efficiency in resonant transmission situations, enabling efficient power transmission over long distances. This feature is particularly useful in consumer electronics, medical devices, industrial equipment, and automotive systems, where reliable and efficient wireless power transmission is critical.
GaN power devices are transforming HVDC transmission systems and smart grids, significantly improving their performance and reliability. These devices enable better load sharing, greater network resiliency, and rapid problem resolution which are essential to today's power grids. GaN power devices improve high-voltage regulation, which increases high-frequency switching efficiency. This is particularly useful in HVDC systems where high-frequency switching is essential to minimize losses and increase efficiency. MMCs in HVDC systems use GaN devices in power modules to reduce power loss. The increased efficiency and lower operating costs of GaN power supplies make them ideal for HVDC applications in these transformers. Incorporating GaN power devices into smart grid technology is a growing trend supported by significant government funding worldwide. Countries like China, Japan, and the United States are leading the way in improving their electricity systems with smart grid technologies.
Global GaN Power Device Market, Segmentation
The GaN Power Device market is segmented based on Devices, Voltage Range, vertical, Applications, and region.
Device:
The Device segment is further classified into recyclable, reusable, and degradable. Among these, the GaN Power Module sub-segment accounted for the highest market share in 2023. GaN power modules have rapidly gained popularity worldwide due to their unsurpassed durability and efficiency. Unlike IGBT and MOSFET modules, which are commonly used in industry for high-voltage equipment such as welders, rolling mills, and water pumps, GaN power modules offer better performance at lower costs. Their growing use in various applications boosts this advantage, both economically and functionally. The high efficiency of GaN modules reduces power loss and improves overall system performance, making them a desirable choice in today's business environments that require both cost efficiency and reliability in high-voltage management. The market for GaN power modules is growing as the industry seeks better efficiency and lower operating costs, indicating a phase-out of outdated semiconductors. Consisting of transistors, diodes, resistors, capacitors, and inductors, discrete GaN power devices are known for their small size, lightweight, and low power consumption.
Industrial Vertical:
The Industrial Vertical segment is further classified into the food & beverage industry, pharmaceuticals and healthcare, personal care, and others. Among these, the personal care sub-segment is anticipated to show the fastest growth by 2032. Unique properties of gallium nitride (GaN) devices. GaN devices, characterized by a large energy band gap and high saturation electron velocity, are crucial for communication high-power and high-speed electronic applications. Compared to gallium arsenide (GaA) devices, GaN high electron mobility transistors (HEMTs) offer superior performance in high power and broadband applications. This development opens up new opportunities for broadband power microwave systems in communications due to the high-power density and relatively high impedance of GaN devices. Thus, GaN technology is expected to revolutionize communication systems by enabling more powerful and efficient devices. In consumer electronics, GaN power devices are paving the way for wireless charging, a disruptive technology that is quickly becoming mainstream. These devices enable fast charging of smartphones and increase the efficiency of solar module converters, which speeds up charging times and reduces the size of the modules.
Region:
The GaN Power Device market in North America is projected to show the fastest growth by 2032s. North America is the largest shareholder in the global GaN (Gallium Nitride) electrical equipment market and is expected to grow at an impressive CAGR of 34.60% during the forecast period. This market leadership is mainly due to the significant participation of countries such as the United States and Canada. Both governments are actively engaged in anti-pollution efforts, the main part of which is promoting the adoption of electric vehicles (EV) and hybrid electric vehicles (HEV). These vehicles rely heavily on GaN power supplies for their excellent efficiency and effectiveness. The search for greener transport solutions is in line with wider environmental goals, which is why GaN technology is central to the development of the automotive industry. The strategic initiatives and supportive policies of these governments have created a favorable environment for the growth of the GaN power device market, highlighting North America's commitment to sustainable technological development.
Some of The Leading/Active Market Players Are-
- Efficient Power Conversion Corporation (USA)
- Fujitsu Limited (Japan)
- GaN Systems Inc. (Canada)
- Infineon Technologies AG (Germany)
- ON Semiconductor Corporation (USA)
- Panasonic Corporation (Japan)
- Taiwan Semiconductor Manufacturing Company Ltd (Taiwan)
- Texas Instruments Inc. (USA)
- Toshiba Corporation (Japan)
- VisIC Technologies Ltd. (Israel)
- RF Micro Devices Inc. (USA)
- Renesas Electronics Corporation (Japan), and Other Active Players
Key Industry Developments
- In June 2024, EPC, the world's leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.
- In June 2024, CGD Launched New GaN Power IC Packages with enhanced thermal for data centers, Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, announced two new packages for the company’s ICeGaN family of GaN power ICs that offer enhanced thermal performance and simplify inspection CGD LAUNCHES NEW GaN POWER. Variants of the well-proven DFN style, both packages are extremely rugged and reliable.
Key Findings of the Study
- The global GaN Power Device market was valued at USD 328.63 million in 2023 and is projected to reach USD 5185.84 million by 2032, growing at a CAGR of 35.87% from 2024 to 2032. This substantial growth underscores the increasing adoption and advantages of GaN over traditional silicon devices.
- GaN power devices are known for their superior efficiency due to their ability to operate at higher frequencies with minimal heat generation. This efficiency improvement is critical in applications requiring fast and accurate power regulation, such as wireless charging, industrial equipment, and automotive systems.
- The market is segmented by application, including consumer electronics, industrial verticals (such as healthcare and automotive), and power grids. This diversification highlights GaN's versatility across various sectors where high efficiency and reliability are paramount.
- North America is poised to exhibit the fastest growth in the GaN Power Device market by 2032, driven by initiatives promoting electric vehicles and sustainable technology solutions. This region's leadership underscores a significant shift towards GaN technology in advancing environmental and efficiency goals.
T. Kumbhar
Author Information
T. Kumbhar is a Senior Market Research Consultant at IMR, specializing in Agro-Chemicals, Food Tech, Consumer Goods, and more. With four years of experience, he delivers market insights, competitive analysis, and data-driven business strategies.
