GaN Power Device Market Synopsis

GaN Power Device Market Size Was Valued at USD 328.63 Million in 2023 and is Projected to Reach USD 5185.84 Million by 2032, Growing at a CAGR of 35.87% From 2024-2032.

Power semiconductor devices are essential for controlling energy flow in electronic circuits, with switched mode power supplies (SMPS) being a popular application for these devices. These materials are essential for numerous electronic gadgets, enabling efficient power conversion through quick on-off switching to regulate and stabilize the voltage and current output. In the realm of power devices, Gallium Nitride (GaN) stands out as a top semiconductor choice because of its unique benefits in performance and efficiency.

• GaN power devices are recognized for their ability to greatly decrease energy losses in electronic systems. The main reason for this efficiency is GaN's capability to function at higher frequencies while producing little heat, resulting in lower power dissipation than traditional silicon devices. The ability of GaN devices to switch rapidly allows them to manage swift fluctuations in current and voltage, a crucial requirement for modern electronic applications that need fast and accurate power control. GaN devices' small size enables better utilization of chip space, leading to a decrease in the system's overall size. Traditional transistors need more chip space to achieve less on-resistance, unlike this.
• Even though materials such as Silicon Carbide (SiC) and Diamond are also wide bandgap materials, GaN power devices are preferred because they are cost-effective and have properties similar to those of the other materials. SiC and Diamond have great thermal and electrical properties, but they are frequently costlier to manufacture. GaN offers a well-rounded combination of high efficiency, small size, and fast performance at a lower cost. From consumer electronics to industrial power systems, GaN technology is becoming popular in power semiconductor devices for a variety of applications, making it a desirable option.

Top Key Players

Efficient Power Conversion Corporation (USA), Fujitsu Limited (Japan), GaN Systems Inc. (Canada), Infineon Technologies AG (Germany), ON Semiconductor Corporation (USA), Panasonic Corporation (Japan), Taiwan Semiconductor Manufacturing Company Ltd (Taiwan), Texas Instruments Inc. (USA), Toshiba Corporation (Japan), VisIC Technologies Ltd. (Israel), RF Micro Devices Inc. (USA), Renesas Electronics Corporation (Japan), NXP Semiconductors N.V. (Netherlands), International Rectifier (USA), Freescale Semiconductor Inc. (USA), International Quantum Epitaxy plc (UK), Nichia Corporation (Japan), and Cree Inc. (USA), and top Active Players.

GaN Power Device Market Trend Analysis

Growing Use of Wireless Charging

• WiTricity Corp. has shown the clear benefits of utilizing Gallium Nitride (GaN) field effect transistors (FETs) compared to conventional silicon MOSFETs for wireless charging technology. GaN FETs provide a significant enhancement in switching speed, resulting in increased efficiency in resonant wireless power transfer. Efficiency improvements are important because they allow for better power transfer in different applications. Silicon MOSFETs can operate at high frequencies only to a certain extent because of their inherent limitations in proximity, which are determined by their ability to switch. GaN power devices are superior when it comes to operating at high frequencies, which makes them perfect for wireless charging. GaN transistors' superior switching capability improves their performance in resonant transfer situations, enabling efficient power transfer over extended distances. This feature is especially advantageous for consumer electronics, medical devices, industrial equipment, and automotive systems, where dependable and effective wireless power transmission is crucial.
• Another reason for the growing use of GaN devices in wireless charging is their decreasing price. GaN transistor use was restricted due to its expensive price, but recent progress in manufacturing has brought down costs drastically. The decrease has increased the availability of GaN devices for different uses, driving up their popularity in the wireless charging sector. With the ongoing advancement of GaN technology, it is on track to substitute silicon-based power MOSFETs, providing better efficiency, performance, and cost savings. GaN devices are poised to become the future of wireless charging technology due to their high switching speeds, excellent performance in resonant transfer, and cost reduction, meeting the increasing demands of various sectors such as consumer, medical, industrial, and automotive.

Government Initiatives in HVDC and Smart Grid

• GaN power devices are transforming HVDC electric power transmission systems and smart grids by greatly improving their performance and reliability. These devices enable better load distribution, increased network flexibility, and immediate problem-solving features crucial for contemporary power grids. GaN power devices improve high voltage regulation, increasing the efficiency of high-frequency switching. This is especially advantageous in HVDC systems, where high-frequency switching is vital for minimizing losses and enhancing efficiency. MMCs in HVDC systems use GaN devices in power modules to reduce power loss. The increased efficiency and lower operating costs of GaN power devices make them perfect for HVDC applications in these converters.
• The incorporation of GaN power devices in smart grid technology is a rising trend backed by significant government funding globally. Nations like China, Japan, and the United States are leading the way in enhancing their electrical systems using smart grid technologies. These improvements are focused on improving the reliability and effectiveness of the power supply to meet the growing need for electricity and the incorporation of renewable energy sources. GaN power devices are essential for this transformation because they offer the fast switching and effective power control required for smart grids. Their capacity to function at increased voltages and frequencies with minimal power loss is essential for updating electrical infrastructure. With governments increasing investments in smart grid technologies, the need for GaN power devices is projected to rise, leading to advancements in power transmission and distribution systems.

GaN Power Device Market Segment Analysis:

GaN Power Device Market Segmented based on Devices, Voltage Range, vertical, and Applications.

By Device, the GaN Power Module segment is expected to dominate the market during the forecast period.

• GaN power modules have quickly become popular worldwide because of their unmatched durability and effectiveness. In contrast to the commonly used IGBT and MOSFET modules in industries for high-voltage devices, such as welders, rolling mills, and water pumps, GaN power modules provide better performance at a lower cost. Their growing use in different applications is fueled by this advantage in both economic and operational aspects. The great efficiency of GaN modules decreases energy wastage and improves overall system performance, making them a desirable option for contemporary business settings that require both cost-efficiency and dependability in high-voltage management. The market for GaN power modules is growing as industries look for improved efficiency and reduced operational costs, showing a move away from outdated semiconductor technologies.
• GaN power discrete devices, which consist of transistors, diodes, resistors, capacitors, and inductors, are recognized for their small size, lightweight, and minimal power usage. These devices consist of various elements such as transistor arrays, MOSFETs, J-FETs (Junction Field-Effect Transistors), bipolar transistors, and transistors with integrated resistors. An impressive characteristic of GaN discrete devices is their capacity to switch at very high speeds with much lower switching losses than silicon devices. This is mainly because of their minimal gate charge and output capacitance. An example of this is the LMG5200, a compact 80V GaN FET power stage that is perfect for high-efficiency uses. The excellent performance features of GaN devices make them ideal for applications that need quick switching and high efficiency, further confirming their role in the changing field of power electronics. As the need for more effective and smaller power solutions increases, GaN discrete devices are ready to be key players in fulfilling these requirements and stimulating advancement.

By Industrial Vertical, IT and telecommunication segment held the largest share of 36.10% in 2023

• The unique properties of Gallium Nitride (GaN) devices. GaN devices, characterized by their large energy band gap and high saturation electron velocity, are crucial for high-power and high-speed electronic applications in communications. Compared to Gallium Arsenide (GaA) devices, GaN high electron mobility transistors (HEMTs) offer superior performance in high power and broadband applications. This advancement opens new opportunities for wideband power microwave systems in communication, thanks to the high-power density and relatively high impedance of GaN devices. Consequently, GaN technology is expected to revolutionize communication systems by enabling more efficient and powerful devices.
• In consumer electronics, GaN power devices are paving the way for wireless charging, a disruptive technology gaining rapid popularity. These devices facilitate fast charging for smartphones and enhance the efficiency of photovoltaic module converters, leading to faster charging times and smaller module sizes. The primary drivers for the adoption of GaN power devices in wireless charging include laptops, smartphones, and photovoltaic module chargers. Furthermore, GaN power devices are instrumental in the automotive sector, particularly for electric and hybrid vehicles. There are two types of GaN power devices used in the automotive industry: lateral and vertical. Lateral GaN power devices, which are more popular, offer higher blocking voltages of 600 volts, better performance characteristics, lower internal resistance, and high-speed resonance compared to silicon power MOSFETs. The rapid advancements in material and device technology over the past decade promise significant applications for GaN power devices in vehicle electrification, particularly in reducing electrical power conversion losses in EV and HEV units.

GaN Power Device Market Regional Insights:

North America is Expected to Dominate the Market Over the Forecast period

• North America stands as the largest shareholder in the global GaN (gallium nitride) power devices market, anticipated to grow at an impressive CAGR of 34.60% during the forecast period. This market leadership is primarily attributed to the substantial involvement of nations like the United States and Canada. Both governments are actively engaged in combating pollution, a key component of which is promoting the adoption of electric vehicles (EVs) and hybrid electric vehicles (HEVs). These vehicles rely heavily on GaN power devices for their superior efficiency and performance. The push towards greener transportation solutions aligns with broader environmental goals, positioning GaN technology as a crucial element in the automotive sector’s evolution. The strategic initiatives and supportive policies by these governments have created a favorable environment for the growth of the GaN power devices market, underscoring North America's commitment to sustainable technological advancements.
• Another significant factor bolstering the GaN power device market in North America is the United States' substantial defense expenditure, the highest in the world. The U.S. defense sector is a major consumer of advanced technologies, including GaN power devices, due to their superior power efficiency, high-temperature performance, and reliability in critical applications. These devices are integral to various defense systems, including radar and communication equipment, which demand robust and efficient power solutions. The continuous investment in defense technologies ensures a steady demand for GaN power devices, further reinforcing the market's growth in the region. As both environmental initiatives and defense advancements drive demand, North America's GaN power device market is poised for sustained growth, reflecting the region's dual focus on innovation and sustainability.

Active Key Players in the GaN Power Device Market

• Efficient Power Conversion Corporation (USA)
• Fujitsu Limited (Japan)
• GaN Systems Inc. (Canada)
• Infineon Technologies AG (Germany)
• ON Semiconductor Corporation (USA)
• Panasonic Corporation (Japan)
• Taiwan Semiconductor Manufacturing Company Ltd (Taiwan)
• Texas Instruments Inc. (USA)
• Toshiba Corporation (Japan)
• VisIC Technologies Ltd. (Israel)
• RF Micro Devices Inc. (USA)
• Renesas Electronics Corporation (Japan)
• NXP Semiconductors N.V. (Netherlands)
• International Rectifier (USA)
• Freescale Semiconductor Inc. (USA)
• International Quantum Epitaxy plc (UK)
• Nichia Corporation (Japan)
• Cree Inc. (USA), and Top Active Players.

Key Industry Developments in the GaN Power Device Market:

• In June 2024, EPC, the world's leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.
• In June 2024, CGD Launched New GaN Power IC Packages with enhanced thermal for data centers, Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, announced two new packages for the company’s ICeGaN family of GaN power ICs that offer enhanced thermal performance and simplify inspection CGD LAUNCHES NEW GaN POWER. Variants of the well-proven DFN style, both packages are extremely rugged and reliable.